Mass action law (electronics)

For other uses, see Mass action.

Under thermal equilibrium the product of the free electron concentration and the free hole concentration is equal to a constant equal to the square of intrinsic carrier concentration . The intrinsic carrier concentration is a function of temperature.

The equation for the mass action law for semiconductors is:[1]

Carrier Concentrations

In semiconductors, free electrons and holes are the carriers that provide conduction. For cases where the number of carriers are much less than the number of band states, the carrier concentrations can be approximated by using Boltzmann statistics, giving the results below.

Electron Concentration

The free electron concentration n can be approximated by

where

Hole Concentration

The free hole concentration p is given by a similar formula

where

Mass Action Law

Using the carrier concentration equations given above, the mass action law can then be stated as

where Eg is the bandgap energy given by Eg = Ec Ev

See also

References

  1. S, Salivahanan; N. Suresh Kumar (2011). Electronic Devices & Circuits. India: Tata McGraw Hill Education Pvt Ltd. p. 1.14. ISBN 0-07-070267-5.


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