Optogan

Optogan
Industry LED
Founded 2004
Website optogan.ru

The Optogan group of companies is a vertically integrated producer of High Brightness LEDs based in St. Petersburg, Russian Federation. The group is also active in Finland and Germany.[1] Founded in 2004 by 3 graduates of Ioffe Phisico-Technical university it is currently owned by various private and government investment funds.[2]

History

Optogan was founded in 2004 in Espoo, Finland by Dr. Maxim Odnoblyudov, Dr. Vladislav Bougrov and Dr. Alexey Kovsh, all graduates of the chair of Nobel Prize laureate Zhores Alferov. It has received several rounds of financing from various European VC investment funds. After the initial technology development stage the company R&D and pilot production line were expanded to MST Factory site in Dortmund, Germany. After 5 years of technology development stage in 2008 the company was acquired by a strategic investor – Russian private equity group Onexim. In 2009 Russian government investment funds Rusnano and RIK have joined Onexim group as investors to develop a full-scale production facility for HB LEDs in Strelna Free-Economic zone near St. Petersburg, Russian Federation.

Shareholders

Onexim Group – 50% +1 share OAO RIK – 33% -1 share Rusnano - 17%

Activities

Optogan is investing in further R&D of GaN technology and building an LED manufacturing facility capable of producing 1,5 billion HB LEDs/month near St.Petersburg in Russia.[3]

Products

Optogan is marketing a range of products, which fall into four main categories: LED chips, packaged LEDs, LED Matrixes (standard light engines consisting of surface mounted LEDs) and Lumminaires.

Technology

Optogan company possesses the whole value chain of technologies in solid state lighting (SSL) necessary for the production of GaN based light emitting diodes (LEDs) and consumer-oriented SSL luminaries. The chain of technologies include

Massive breakthrough in GaN based LED technology started form pioneering works by S. Nakamura in early nineties of last century. OptoGaN technologies are characterized by improved quality of GaN wafers[5] and patented LED epilayer structure with enhanced light generation capability, original f-PowerTM chip design enabling uniform electric current distribution in excess of 300 A/cm2, effectiveness of LEDs as high as 110 lm/W which is at the front level of World leading LED manufactures.[6] OptoGaN intellectual property (IP) and technologies are covered by 35 granted and pending patents, e.g. European Patent EP1903619B1[7] “Semiconductor heterostructure and light emitting diode comprising the semiconductor heterostructures” and Russian Patent No 2368030[8] “Semiconductor substrate, semiconductor device and method of manufacturing of a semiconductor substrate”.

References

  1. ↑ http://www.optogan.com/
  2. ↑ Голодные львы инноваций//Эксперт, 21 сентября 2009г.
  3. ↑ Россия заменит лампы накаливания на светодиоды// Forbes, 23.03.2010
  4. ↑ http://www.optogan.com/products_optogan.php
  5. ↑ LED Applications&Lighting Systems//The technology of tomorrow for general lighting applications, March-April 2010
  6. ↑ New results from Lumileds indicate an output of 136 lm at 350 mA for white LEDs, corresponding to 115 lm/W efficacy// LEDs Magazine,23 january 2007
  7. ↑ http://v3.espacenet.com/publicationDetails/biblio?DB=EPODOC&at=14&locale=enGB&FT=D&CC=HK&NR=1110147A1&KC=A1
  8. ↑ http://v3.espacenet.com/publicationDetails/biblio?DB=EPODOC&at=9&locale=en_GB&FT=D&CC=HK&NR=1111264A1&KC=A1
This article is issued from Wikipedia - version of the 8/21/2016. The text is available under the Creative Commons Attribution/Share Alike but additional terms may apply for the media files.